Crystal Growth and Etching of Bi2Te3 Alloys
Volume: 2 - Issue: 07 - Date: 01-07-2013
Approved ISSN: 2278-1412
Published Id: IJAECESTU207 | Page No.: 217-220
Author: Piyush Patel
Co- Author: S. M. Vyas,Vimal Patel,Sanket Thakor,M.P.Jani,G.R.Pandya
Abstract:-Anisotropic phenomena in the layered Bi2Te3 crystal were investigated. Bismuth is a
semimetal with high electron and whole mobility. Interest in Bi2Te3 material system has recently
been stimulated by promise of a new generation of thermoelectric materials based on this alloy.
Single crystals of Bi2Te3 were prepared by a modified Bridgman method with 1.5-cm/hour growth
velocity and temperature gradient 650C/cm. Some interesting features were observed on the top
free surface of the as-grown Bi2Te3 single crystal. Also new dislocation etchant was developed by
the successive trial–error method. The dislocation etchant was found to reveled new dislocations
on the cleavage surface of the crystals, the dislocation density calculated by the etchpit count
method. The results are discussed in details.
Key Words:-Bi2Te3, crystal growth, dislocation enchant, Single crystals, semi metal and top free surface.
Area:-Engineering
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