Anisotropic phenomena in the layered Bi2Te3 crystal were investigated. Bismuth is a semimetal with high electron and whole mobility. Interest in Bi2Te3 material system has recently been stimulated by promise of a new generation of thermoelectric materials based on this alloy. Single crystals of Bi2Te3 were prepared by a modified Bridgman method with 1.5-cm/hour growth velocity and temperature gradient 650C/cm. Some interesting features were observed on the top free surface of the as-grown Bi2Te3 single crystal. Also new dislocation etchant was developed by the successive trial–error method. The dislocation etchant was found to reveled new dislocations on the cleavage surface of the crystals, the dislocation density calculated by the etchpit count method. The results are discussed in details.